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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AOW12N50 Full Production - TO262 Single N 500 30 12 250 520 - - - 30.7
AOW11S65 Not For New Designs - TO262 Single N 650 30 11 198 399 - - - 13.2
AOW11S60 Not For New Designs - TO262 Single N 600 30 11 178 399 - - - 11
AOW11N60 Full Production - TO262 Single N 600 30 11 272 700 - - - 30.6
AOW10N65 Full Production - TO262 Single N 650 30 10 250 1,000 - - - 27.7
AOW10N60 Full Production - TO262 Single N 600 30 10 250 750 - - - 31
AOV20S60 Not For New Designs - DFN8x8-4L Single N 600 30 18 276 250 - - - 20
AOV15S60 Not For New Designs - DFN8x8-4L Single N 600 30 12 208 360 - - - 15.6
AOV11S60 Not For New Designs - DFN8x8-4L Single N 600 30 8 156 500 - - - 11
AOUS66923 Full Production - UltraSO-8 Single N 100 20 58 73 11 15 - - 12.5
AOUS66920 New - UltraSO-8 Single N 100 20 69 86 8.2 10.7 - - 16.7
AOUS66616 New - UltraSO-8 Single N 60 20 90 92.5 3.3 - - - -
AOUS66416 New - UltraSO-8 Single N 40 20 69 73.5 3.3 5 - - 13.5
AOU4S60 Not For New Designs - TO251 Single N 600 30 4 56.8 900 - - - 6
AOU4N60 Full Production - TO251 Single N 600 30 4 104 2,300 - - - 12
AOU3N60 Full Production - TO251 Single N 600 30 2.5 56.8 3,500 - - - 9.9
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