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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AO4482 Full Production - SOIC-8L Single N 100 20 6 3.1 37 42 - - 18
AO4484 Full Production - SOIC-8L Single N 40 20 10 1.7 10 12.5 - - 13.6
AO4492 Full Production - SOIC-8L Single N 30 20 14 3.1 9.5 14 - - 7.1
AO4496 Full Production - SOIC-8L Single N 30 20 10 3.1 19.5 26 - - 4.6
AO4576 Full Production - SOIC-8L Single N 30 20 20 3.1 5.8 9.8 - - 6.8
AO4606 Full Production - SOIC-8L Complementary N 30 20 6 2 30 42 - - 2.55
AO4612 Full Production - SOIC-8L Complementary N 60 20 4.5 2 56 77 - - 4.3
AO4614B Full Production - SOIC-8L Complementary N 40 20 6 2 30 38 - - 4.3
AO4616 Full Production - SOIC-8L Complementary N 30 20 8.5 2 20 28 - - 7.5
AO4620 Full Production - SOIC-8L Complementary N 30 20 7.2 2 24 36 - - 3.5
AO4627 Full Production - SOIC-8L Complementary N 30 20 4.5 2 50 68 - - 2
AO4629 Full Production - SOIC-8L Complementary N 30 20 6 2 30 42 - - 2.55
AO4630 Full Production - SOIC-8L Complementary N 30 12 7 2 23 28 36 - 6
AO4752 Full Production - SOIC-8L Single N 30 20 15 3.1 8.8 15.5 - - 5.5
AO4800 Full Production - SOIC-8L Dual N 30 12 6.9 2 27 32 50 - 6
AO4800B Full Production - SOIC-8L Dual N 30 12 6.9 2 27 32 50 - 6
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