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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AO4806 Full Production - SOIC-8L Dual N 20 12 9.4 2 14 16 22 30 17.9
AO4812 Full Production - SOIC-8L Dual N 30 20 6 2 30 42 - - 2.55
AO4818 Full Production - SOIC-8L Dual N 30 20 8 2 19 23 - - 7.5
AO4818B Full Production - SOIC-8L Dual N 30 20 8 2 19 26 - - 7.5
AO4822 Full Production - SOIC-8L Dual N 30 20 8 2 19 26 - - 7.5
AO4822A Full Production - SOIC-8L Dual N 30 20 8 2 19 26 - - 7.5
AO4828 Full Production - SOIC-8L Dual N 60 20 4.5 2 56 77 - - 4.3
AO4832 Full Production - SOIC-8L Dual N 30 20 10 2 13 17.5 - - 6.6
AO4838 Full Production - SOIC-8L Dual N 30 20 11 2 9.6 13 - - 8
AO4840E Full Production - SOIC-8L Dual N 40 20 6 2 28 35 - - 4.5
AO4842 Full Production - SOIC-8L Dual N 30 20 7.7 2 21 30 - - 3.5
AO4854 Full Production - SOIC-8L Dual N 30 20 8 2 19 23 - - 7.5
AO4862 Full Production - SOIC-8L Dual N 30 20 4.5 1.7 50 68 - - 2
AO4862E Full Production - SOIC-8L Dual N 30 20 4.5 1.7 46 65 - - 2
AO4882 Full Production - SOIC-8L Dual N 40 20 8 2 19 27 - - 3
AO4884 Full Production - SOIC-8L Dual N 40 20 10 2 13 16 - - 13.6
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