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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AOY66923 New - TO251B Single N 100 20 58 73 11 15 - - 12.5
AOY66920 New - TO251B Single N 100 20 70 89 8.2 10.7 - - 16.7
AOY423 Full Production - TO251B Single P -30 25 -70 90 8.5 - - - 45
AOY2N60 Full Production - TO251B Single N 600 30 2 57 4,700 - - - 6.5
AOY2610E Full Production - TO251B Single N 60 20 46 59.5 9.5 13.3 - - 7
AOWF9N70 Full Production - TO262F Single N 700 30 9 28 1,200 - - - 28.5
AOWF8N50 Full Production - TO262F Single N 500 30 8 27.8 850 - - - 23.6
AOWF7S65 Not For New Designs - TO262F Single N 650 30 7 25 650 - - - 9.2
AOWF7S60 Not For New Designs - TO262F Single N 600 30 7 25 600 - - - 8.2
AOWF4S60 Not For New Designs - TO262F Single N 600 30 4 83 900 - - - 6
AOWF4N60 Full Production - TO262F Single N 600 30 4 25 2,300 - - - 12
AOWF412 Not For New Designs - TO262F Single N 100 25 30 33 15.8 19.4 - - 45
AOWF296 Full Production - TO262F Single N 100 20 37 26 9.7 - - - 37
AOWF25S65 Not For New Designs - TO262F Single N 650 30 25 28 190 - - - 26.4
AOWF20S60 Not For New Designs - TO262F Single N 600 30 20 28 199 - - - 19.8
AOWF190A60 Full Production - TO262F Single N 600 20 20 27 190 - - - 34
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