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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AON5800 Not For New Designs AON5810 DFN2x5_6L Common-Drain Dual - N 20 12 8 6.3 1.6 1 0 16 20 27 45 0 - 13.1
AO8818 Obsolete AO8814 TSSOP-8 Common-Drain - N 30 12 7 5.5 1.5 0.96 0 18 20 27 58 0 - 11.6
AO8822 Full Production - TSSOP-8 Common-Drain - N 20 12 7 5.5 1.5 0.96 0 18 22 27 - 0 - 6
AOC2802 Last Time Buy - WLCSP1.57x1.57 Common-Drain - N 20 12 6 - 1.3 - - - 17 27 - - - 10.4
AON3816 Full Production - DFN3x3_8L NEP Dual - N 20 12 4 3.1 2.5 1.6 - - 22 28 - - - 11
AOC2806 New - AlphaDFN1.7x1.7_4L - 20 12 4.5 - 0.7 - - - 18 29 - - - 12.5
AO8806 Last Time Buy AO8810 TSSOP-8 Common-Drain Dual - N 20 8 6.4 5.4 1.5 1.08 - - 25 30 40 - - 15
AO6808 Full Production - TSOP-6 Dual - N 20 12 4.6 3.7 0.8 0.5 - - 23 30 - - - 7.7
AON5802B Full Production AON5820 DFN2x5_6L Common-Drain - N 30 12 7.2 5.6 1.6 1 - - 19 30 - - - 7.5
AOC2800 Last Time Buy - WLCSP1.57x1.57 Common-Drain - N 30 12 6 - 1.3 - - - 21 30.5 - - - 9.1
AO8820 Full Production - TSSOP-8 Common-Drain - N 20 12 7 5.5 1.5 0.96 0 21 24 32 - 0 - 6
AON3806 Obsolete - DFN3x3_8L NEP Dual - N 20 12 6 4.7 2.5 1.6 - - 22 33 - - - 6
AO9926B Full Production - SOIC-8 Dual - N 20 12 7.6 6.1 2 1.28 0 23 26 34 52 0 - 6
AO9926C Full Production - SOIC-8 Dual - N 20 12 7.6 6.1 2 1.28 - 23 26 34 52 - - 6
AON7826 Last Time Buy - DFN3x3A_8L Dual Dual - N 20 12 22 14 16.7 6.7 - 23 26 34 52 - - 6
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