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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO4830 Not For New Designs AO4892 SOIC-8 Dual - N 80 30 3.5 2.9 2 1.3 - 75 - - - - - 11
AO4900 Not For New Designs AO4924 SOIC-8 Dual - N 30 12 6.9 5.8 2 1.44 - 27 32 50 - - - 9.6
AO4948 Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8.8 7.1 2 1.3 - 16 22 - - - - 10.4
Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8 6.5 2 1.3 - 19 28 - - - - 7.5
AO6804 Not For New Designs AO6804A TSOP-6 - 20 12 5 4 1.3 0.8 - - 32 42 - - - 5.8
AON7900 Obsolete AON7934 DFN3.3x3.3A_8L Asymmetric Dual - N 30 20 40 31 50 20 - 6.7 8.5 - - - - 12
Obsolete AON7934 DFN3.3x3.3A_8L Asymmetric Dual - N 30 20 24 15 17 7 - 21 28 - - - - 4
AON6970 Obsolete - DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 85 66 78 31 - 1.5 2.3 - - - - 27
AO4918 Obsolete - SOIC-8 Asymmetric Dual - N 30 12 9.3 7.4 2 1.28 - 14.5 18 - - - - 30.5
AO4824L Obsolete AO4924 SOIC-8 Asymmetric Dual - N 30 12 9.8 7.8 2 1.28 - 13 15 - - - - 30.5
AO4922 Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 12 7.3 5.9 2 1.3 - 24 29 - - - - 10
AO4824L Obsolete AO4924 SOIC-8 Asymmetric Dual - N 30 20 8.5 6.8 2 1.28 - 17 27 - - - - 9.36
AO8803 Obsolete AO8807L TSSOP-8 Dual - P -12 8 -7 -5.8 1.4 0.9 0 0 18 22 29 0 - 36.6
AON7812 Obsolete - DFN3x3A_8L Dual Dual - N 30 20 6 4.5 12.5 5 - 14.5 20.5 - - - - 4.4
AO8818 Obsolete AO8814 TSSOP-8 Common-Drain - N 30 12 7 5.5 1.5 0.96 0 18 20 27 58 0 - 11.6
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