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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AON6970 Obsolete - DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 85 66 78 31 - 1.5 2.3 - - - - 27
AON6980 Full Production - DFN5x6B_8L EP2 Asymmetric Dual - N 30 20 28 22 23.5 9.4 - 6.8 10.3 - - - - 6.4
Full Production - DFN5x6B_8L EP2 Asymmetric Dual - N 30 12 36 28 32 13 - 3.8 4.9 - - - - 21
AOC2870 New - AlphaDFN1.7x1.7_4L Common-Drain - N 20 12 10 - 1.4 - - - 11.9 20 - - - 11.5
AON3820 New - DFN3x3_8L NEP Dual - N 24 12 8 6.2 20.8 1.3 - - 8.9 11.8 - - - 12.5
AO4800 Full Production - SOIC-8 Dual - N 30 12 6.9 5.8 2 1.3 - 27 32 50 - - - 6
AO4801 Full Production - SOIC-8 Dual - P -30 12 -5 -4 2 1.3 - 48 57 80 - - - 7
AO4803 Full Production - SOIC-8 Dual - P -30 20 -5 -4.2 2 1.3 - 52 87 - - - - 4.6
AO4806 Full Production - SOIC-8 Dual - N 20 12 9.4 7.5 2 1.28 - 14 16 22 30 - - 17.9
AO4812 Full Production - SOIC-8 Dual - N 30 20 6 5 2 1.3 - 30 42 - - - - 2.55
AO4815 Full Production - SOIC-8 Dual - P -30 25 -8 -6.9 2 1.44 - 20 0 0 0 0 - 41
AO4817 Obsolete - SOIC-8 Dual - P -30 25 -8 -6.9 2 1.44 - 21 0 0 0 0 - 30
AO4818 Full Production - SOIC-8 Dual - N 30 20 8 6.5 2 1.3 - 19 23 - - - - 7.5
AO4822 Full Production - SOIC-8 Dual - N 30 20 8 6.5 2 1.3 - 19 26 - - - - 7.5
AO4914 Full Production - SOIC-8 Dual - N 30 20 8 6.5 2 1.3 - 20.5 28 - - - - 7.5
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