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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AON7934 Full Production - DFN3x3A_8L EP2 Asymmetric Dual - N 30 20 18 14 25 10 - 7.7 11.6 - - - - 6
AON6850 Full Production - DFN5x6_8L EP2 Dual - N 100 25 28 18 56 22 - 35 - - - - - 24
AON6970 Obsolete - DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 58 36 31 12 - 5.4 8.5 - - - - 8
Obsolete - DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 85 66 78 31 - 1.5 2.3 - - - - 27
AON6992 New - DFN5x6D_8L EP2S Asymmetric Dual - N 30 12 85 67 45 18 - 2 2.5 - - - - 21
AON6994 New - DFN5x6D_8L EP2S Asymmetric Dual - N 30 12 82 54 31 13 - 2.8 3.5 - - - - 17
AON6980 Full Production - DFN5x6B_8L EP2 Asymmetric Dual - N 30 20 28 22 23.5 9.4 - 6.8 10.3 - - - - 6.4
Full Production - DFN5x6B_8L EP2 Asymmetric Dual - N 30 12 36 28 32 13 - 3.8 4.9 - - - - 21
AOC2806 New - AlphaDFN1.7x1.7_4L Common-Drain - N 20 12 4.5 - 0.7 - - - 18 29 - - - 12.5
AON6992 New - DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
AON6994 New - DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
AON6998 New - DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
AON2801 Full Production - DFN2x2_6L Dual - P -20 8 -3 -2 1.1 0.73 - - 120 160 200 - - 5
AOC2870 New - AlphaDFN1.7x1.7_4L Common-Drain - N 20 12 10 - 1.4 - - - 11.9 20 - - - 11.5
AON6998 New - DFN5x6D_8L EP2S Asymmetric Dual - N 30 12 82 54 31 13 - 2.6 2.99 - - - - 17
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