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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO4918 Obsolete - SOIC-8 Asymmetric Dual - N 30 20 8.3 6.7 2 1.28 - 18 27 - - - - 9.36
Obsolete - SOIC-8 Asymmetric Dual - N 30 12 9.3 7.4 2 1.28 - 14.5 18 - - - - 30.5
AO4940 Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 20 7.8 6.3 2 1.3 - 21 32 - - - - 3.5
AO4854 Full Production - SOIC-8 Dual - N 30 20 8 6.5 2 1.3 - 19 23 - - - - 7.5
AO4822A Full Production - SOIC-8 Dual - N 30 20 8.5 6.5 2 1.3 - 19 26 - - - - 7.5
AO4912 Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 12 7 6.4 2 1.28 - 26 31 - - - - 6.04
AO4940 Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 20 9.1 7.3 2 1.3 - 15 23 - - - - 7.8
AO4824L Obsolete AO4924 SOIC-8 Asymmetric Dual - N 30 12 9.8 7.8 2 1.28 - 13 15 - - - - 30.5
AO4840 Full Production - SOIC-8 Dual - N 40 20 6 5 2 1.28 - 30 38 - - - - 4.3
AO4924 Full Production - SOIC-8 Asymmetric Dual - N 30 12 9 7.2 2 1.3 - 15.8 19.5 - - - - 12
Full Production - SOIC-8 Asymmetric Dual - N 30 12 7.3 5.9 2 1.3 - 24 29 - - - - 10
AO4922 Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 12 9 7.2 2 1.3 - 15.8 18.5 - - - - 15
Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 12 7.3 5.9 2 1.3 - 24 29 - - - - 10
AO4818B Full Production - SOIC-8 Dual - N 30 20 8.5 6.6 2 1.3 - 19 26 - - - - 7.5
AO4938 Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 20 8.8 7.1 2 1.3 - 16 22 - - - - 10.4
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