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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO4938 Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 20 8 6.5 2 1.3 - 19 28 - - - - 7.5
AO4824L Obsolete AO4924 SOIC-8 Asymmetric Dual - N 30 20 8.5 6.8 2 1.28 - 17 27 - - - - 9.36
AO4803A Full Production - SOIC-8 Dual - P -30 20 -5 -4 2 1.3 - 46 74 - - - - 4.6
AO4912 Obsolete AO4932 SOIC-8 Asymmetric Dual - N 30 20 8.5 6.8 2 1.28 - 17 25 - - - - 9.36
AO4832 Full Production - SOIC-8 Dual - N 30 20 10 8 2 1.3 - 13 17.5 - - - - 6.6
AO4892 Full Production - SOIC-8 Dual - N 100 20 4 3 2 1.3 - 68 94 - - - - 3
AO4952 Full Production - SOIC-8 Asymmetric Dual - N 30 20 11 9 2 1.3 - 11.5 16.5 - - - - 4.3
AO4840E New - SOIC-8 Dual - N 40 20 6 5 2 1.2 - 28 35 - - - - 4.5
AO4830 Not For New Designs AO4892 SOIC-8 Dual - N 80 30 3.5 2.9 2 1.3 - 75 - - - - - 11
AO4932 Not For New Designs AO4952 SOIC-8 Asymmetric Dual - N 30 12 11 9 2 1.3 - 12.5 15 - - - - 8.7
Not For New Designs AO4952 SOIC-8 Asymmetric Dual - N 30 20 8 6.5 2 1.3 - 19 23 - - - - 7.5
AO4948 Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8.8 7.1 2 1.3 - 16 22 - - - - 10.4
Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8 6.5 2 1.3 - 19 28 - - - - 7.5
AON6910A Not For New Designs AON6996 DFN5x6B_8L EP2 Asymmetric Dual - N 30 20 37 23 31 12.5 - 14 20 - - - - 3.3
Not For New Designs AON6996 DFN5x6B_8L EP2 Asymmetric Dual - N 30 12 80 52 52 20 - 4.1 5 - - - - 24
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