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Alpha and Omega Semiconductor Announces Shield Gate Technology Generation 2 100V 3.6mOhm MOSFET for High-Density Power Supply Solutions more »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AON6816 Full Production - DFN5x6_8L EP2 - 30 20 16 13 21 8 - 6.2 9.6 - - - - 19.7
AON7804 Full Production - DFN3x3A_8L Dual - 30 20 22 14 17 7 - 21 26 - - - - 7.5
AO4800 Full Production - SOIC-8 Dual - N 30 12 6.9 5.8 2 1.3 - 27 32 50 - - - 6
AO4817 Obsolete - SOIC-8 Dual - P -30 25 -8 -6.9 2 1.44 - 21 0 0 0 0 - 30
AO4818 Full Production - SOIC-8 Dual - N 30 20 8 6.5 2 1.3 - 19 23 - - - - 7.5
AO4821 Last Time Buy - SOIC-8 Dual - P -12 8 -9 -7 2 1.28 0 0 19 24 30 0 - 19
AO4822 Full Production - SOIC-8 Dual - N 30 20 8 6.5 2 1.3 - 19 26 - - - - 7.5
AO4832 Full Production - SOIC-8 Dual - N 30 20 10 8 2 1.3 - 13 17.5 - - - - 6.6
AO4854 Full Production - SOIC-8 Dual - N 30 20 8 6.5 2 1.3 - 19 23 - - - - 7.5
AO4862 Full Production - SOIC-8 Dual - N 30 20 4.5 3.5 1.7 1.1 - 50 68 - - - - 2
AO4884 Full Production - SOIC-8 - 40 20 10 8 2 1.3 - 13 16 - - - - 13.6
AO4914 Full Production - SOIC-8 Dual - N 30 20 8 6.5 2 1.3 - 20.5 28 - - - - 7.5
AO4918 Obsolete - SOIC-8 Asymmetric Dual - N 30 20 8.3 6.7 2 1.28 - 18 27 - - - - 9.36
AO4924 Full Production - SOIC-8 Asymmetric Dual - N 30 12 9 7.2 2 1.3 - 15.8 19.5 - - - - 12
AO4948 Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8.8 7.1 2 1.3 - 16 22 - - - - 10.4
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