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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO7800 Full Production - SC-70-6L Dual - N 20 8 0.9 0.7 0.3 0.19 0 0 300 350 450 0 - 1.57
AO4948 Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8.8 7.1 2 1.3 - 16 22 - - - - 10.4
Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8 6.5 2 1.3 - 19 28 - - - - 7.5
AON6918 Not For New Designs - DFN5x6A_8L Asymmetric Dual - N 25 20 60 38 31 12.5 - 5.2 7.8 - - - - 7.2
Not For New Designs - DFN5x6A_8L Asymmetric Dual - N 25 20 85 66 104 41.5 - 1.8 2.7 - - - - 23
AON6812 Full Production - DFN5x6B_8L EP1 Common-Drain - N 30 20 28 22 31 12.5 - 4 6 - - - - 11
AO4862 Full Production - SOIC-8 Dual - N 30 20 4.5 3.5 1.7 1.1 - 50 68 - - - - 2
AON6884 Full Production - DFN5x6_8L EP2 Dual - N 40 20 34 21 21 8 - 11.3 13.8 - - - - 13.6
AOE6932 New - DFN5x6E_8L Asymmetric Dual - N 30 12 85 85 52 20 - 1.4 1.8 - - - - 30
AON5816 New - DFN2x5_6L Common-Drain - N 20 12 12 10 1.7 1 - - 6.5 8.5 - - - 22
AO6801E Last Time Buy - TSOP-6 Dual - P -30 12 -2 -1.6 0.7 0.45 - 110 135 - - - - 3.5
AOC2800 Last Time Buy - WLCSP1.57x1.57 Common-Drain - N 30 12 6 - 1.3 - - - 21 30.5 - - - 9.1
AOC2802 Last Time Buy - WLCSP1.57x1.57 Common-Drain - N 20 12 6 - 1.3 - - - 17 27 - - - 10.4
AOC4810 Last Time Buy - AlphaDFN3.2x2_8L TEP1 Common-Drain - N 30 20 8 - 0.9 - - 4.4 7.25 - - - - 20
AON7812 Obsolete - DFN3x3A_8L Dual Dual - N 30 20 6 4.5 12.5 5 - 14.5 20.5 - - - - 4.4
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