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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AON6938 Last Time Buy AON6994 DFN5x6B_8L EP2 Asymmetric Dual - N 30 20 42 33 78 31 - 2.2 3.3 - - - - 21
AON6978 Full Production - DFN5x6B_8L EP2 Asymmetric Dual 30 20 28 22 31 12 - 5.7 9.4 - - - - 6.8
AON6926 Last Time Buy - DFN5x6B_8L EP2 Asymmetric Dual - N 30 20 44 28 31 12.5 - 11 14 - - - - 9.5
AON6978 Last Time Buy AON6996 DFN5x6B_8L EP2 Asymmetric Dual 30 12 36 28 33 13 - 3.8 4.9 - - - - 20.6
AON6970 Obsolete - DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 85 66 78 31 - 1.5 2.3 - - - - 27
AON6992 New - DFN5x6D_8L EP2S Asymmetric Dual 30 12 85 67 45 18 - 2 2.5 - - - - 21
New - DFN5x6D_8L EP2S Asymmetric Dual 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
AON6994 New - DFN5x6D_8L EP2S Asymmetric Dual 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
New - DFN5x6D_8L EP2S Asymmetric Dual 30 12 82 54 31 13 - 2.8 3.5 - - - - 17
AON6998 New - DFN5x6D_8L EP2S Asymmetric Dual 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
New - DFN5x6D_8L EP2S Asymmetric Dual 30 12 82 54 31 13 - 2.6 2.99 - - - - 17
AON6970 Last Time Buy AON6992 DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 58 36 31 12 - 5.4 8.5 - - - - 8
AOE6932 New - DFN5x6E_8L Asymmetric Dual - N 30 12 85 85 52 20 - 1.4 1.8 - - - - 30
AOMU66414Q New - DFN8x6_8L_EP2_P Dual - N 40 20 85 85 65 32.5 - 2.3 3.5 - - - - 18
AO7800 Full Production - SC-70-6L Dual - N 20 8 0.9 0.7 0.3 0.19 0 0 300 350 450 0 - 1.57
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