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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO4952 Full Production - SOIC-8 Asymmetric Dual - N 30 20 11 9 2 1.3 - 11.5 16.5 - - - - 4.3
AO4840E New - SOIC-8 Dual - N 40 20 6 5 2 1.2 - 28 35 - - - - 4.5
AO8808A Full Production - TSSOP-8 Dual - N 20 12 8 6.3 1.4 1 0 14 15 20 28 0 - 16
AO8814 Full Production - TSSOP-8 Common-Drain Dual - N 20 12 7.5 6 1.5 0.96 0 16 18 24 34 0 - 15.4
AO7800 Full Production - SC-70-6L Dual - N 20 8 0.9 0.7 0.3 0.19 0 0 300 350 450 0 - 1.57
AO7801 Full Production - SC-70-6L Dual - P -20 8 -0.6 -0.48 0.3 0.19 0 0 520 700 950 0 - 1.44
AO4948 Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8.8 7.1 2 1.3 - 16 22 - - - - 10.4
Not For New Designs - SOIC-8 Asymmetric Dual - N 30 20 8 6.5 2 1.3 - 19 28 - - - - 7.5
AON6918 Not For New Designs - DFN5x6A_8L Asymmetric Dual - N 25 20 60 38 31 12.5 - 5.2 7.8 - - - - 7.2
Not For New Designs - DFN5x6A_8L Asymmetric Dual - N 25 20 85 66 104 41.5 - 1.8 2.7 - - - - 23
AON6812 Full Production - DFN5x6B_8L EP1 Common-Drain - N 30 20 28 22 31 12.5 - 4 6 - - - - 11
AO4842 Full Production - SOIC-8 Dual - N 30 20 7.7 6.5 2 1.44 - 22 32 - - - - 3.5
AO4838 Full Production - SOIC-8 Dual - N 30 20 11 9 2 1.3 - 9.6 13 - - - - 8
AO4862 Full Production - SOIC-8 Dual - N 30 20 4.5 3.5 1.7 1.1 - 50 68 - - - - 2
AON6816 Full Production - DFN5x6_8L EP2 Dual - N 30 20 16 13 21 8 - 6.2 9.6 - - - - 19.7
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