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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO5800E Obsolete - SC-89-6L Dual - N 60 20 0.4 0.3 0.4 0.24 - 1,600 1,900 - - - - 1
AO4952 Last Time Buy - SOIC-8 Asymmetric Dual - N 30 20 11 9 2 1.3 - 10.5 15.5 - - - - 4.9
AO4852 Obsolete - SOIC-8 Dual - N 60 20 3 2.4 1.4 0.9 - 90 105 - - - - 3.6
AONE36132 New - DFN3.3x3.3A_8L_EP2_S Asymmetric Dual - N 25 12 60 38 25 10 - 4.6 6 - - - - 6.5
New - DFN3.3x3.3A_8L_EP2_S Asymmetric Dual - N 25 12 60 60 35.5 14 - 1.4 1.7 - - - - 25
AO4892 Full Production - SOIC-8 Dual - N 100 20 4 3 2 1.3 - 68 94 - - - - 3
AON6978 Full Production - DFN5x6B_8L EP2 Asymmetric Dual 30 20 28 22 31 12 - 5.7 9.4 - - - - 6.8
AON6992 New - DFN5x6D_8L EP2S Asymmetric Dual 30 12 85 67 45 18 - 2 2.5 - - - - 21
New - DFN5x6D_8L EP2S Asymmetric Dual 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
AON6994 New - DFN5x6D_8L EP2S Asymmetric Dual 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
New - DFN5x6D_8L EP2S Asymmetric Dual 30 12 82 54 31 13 - 2.8 3.5 - - - - 17
AON6998 New - DFN5x6D_8L EP2S Asymmetric Dual 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
New - DFN5x6D_8L EP2S Asymmetric Dual 30 12 82 54 31 13 - 2.6 2.99 - - - - 17
AON6926 Last Time Buy - DFN5x6B_8L EP2 Asymmetric Dual - N 30 20 44 28 31 12.5 - 11 14 - - - - 9.5
AOC4810 Last Time Buy - AlphaDFN3.2x2_8L TEP1 Common-Drain - N 30 20 8 - 0.9 - - 4.4 7.25 - - - - 20
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