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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AOMU66414Q New - DFN8x6_8L_EP2_P Dual - N 40 20 85 85 65 32.5 - 2.3 3.5 - - - - 18
AON6970 Last Time Buy AON6992 DFN5x6D_8L EP2S Asymmetric Dual - N 30 20 58 36 31 12 - 5.4 8.5 - - - - 8
AON6978 Last Time Buy AON6996 DFN5x6B_8L EP2 Asymmetric Dual 30 12 36 28 33 13 - 3.8 4.9 - - - - 20.6
AO4817 Obsolete - SOIC-8 Dual - P -30 25 -8 -6.9 2 1.44 - 21 0 0 0 0 - 30
AO4815 Full Production - SOIC-8 Dual - P -30 25 -8 -6.9 2 1.44 - 20 0 0 0 0 - 41
AO6802 Full Production - TSOP-6 Dual - N 30 20 3.5 3 1.15 0.73 0 50 70 0 0 0 - 2
AO4813 Full Production - SOIC-8 - -30 20 -7.1 -5.6 2 1.3 0 25 40 0 0 0 - 9.6
AO4828 Full Production - SOIC-8 - 60 20 4.5 3.6 2 1.28 0 56 77 0 0 0 - 4.3
AO4826 Obsolete - SOIC-8 Dual - N 60 20 6.3 5 2 1.28 - 25 30 0 0 0 - 24.2
AOC3860 New - AlphaDFN3.05x1.77_6L Common-Drain - N 12 8 30 - 2.5 - - - 2.7 4.2 - - - 44
AOC3870 New - AlphaDFN3.01x1.52_10 Common-Drain - N 12 8 25 - 2.2 - - - 2.8 4.7 - - - 32
AOC3860A New - AlphaDFN3.05x1.77A_6L Common-Drain - N 12 8 25 - 2.5 - - - 3.5 5 - - - 44
AOC3870A New - AlphaDFN3.01x1.52A_10L Common-Drain - N 12 8 22 - 2.3 - - - 3.7 5.6 - - - 32
AON5816 New - DFN2x5A_6L Common-Drain - N 20 12 12 10 1.7 1 - - 6.5 8.5 - - - 22
AON3820 New - DFN3x3_8L NEP Dual - N 24 12 8 6.2 20.8 1.3 - - 8.9 11.8 - - - 12.5
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