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Alpha and Omega Semiconductor Announces Shield Gate Technology Generation 2 100V 3.6mOhm MOSFET for High-Density Power Supply Solutions more »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AON6998 New - DFN5x6D_8L EP2S Asymmetric Dual 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
New - DFN5x6D_8L EP2S Asymmetric Dual 30 12 82 54 31 13 - 2.6 2.99 - - - - 17
AO4817 Obsolete - SOIC-8 Dual - P -30 25 -8 -6.9 2 1.44 - 21 0 0 0 0 - 30
AO4815 Full Production - SOIC-8 Dual - P -30 25 -8 -6.9 2 1.44 - 20 0 0 0 0 - 41
AO6802 Full Production - TSOP-6 Dual - N 30 20 3.5 3 1.15 0.73 0 50 70 0 0 0 - 2
AO4813 Full Production - SOIC-8 - -30 20 -7.1 -5.6 2 1.3 0 25 40 0 0 0 - 9.6
AO4828 Full Production - SOIC-8 - 60 20 4.5 3.6 2 1.28 0 56 77 0 0 0 - 4.3
AO4826 Obsolete - SOIC-8 Dual - N 60 20 6.3 5 2 1.28 - 25 30 0 0 0 - 24.2
AOC3860 New - AlphaDFN3.05x1.77_6L Common-Drain - N 12 8 30 - 2.5 - - - 2.7 4.2 - - - 44
AOC3870 New - AlphaDFN3.01x1.52_10 Common-Drain - N 12 8 25 - 2.2 - - - 2.8 4.7 - - - 32
AON5816 New - DFN2x5A_6L Common-Drain - N 20 12 12 10 1.7 1 - - 6.5 8.5 - - - 22
AON3820 New - DFN3x3_8L NEP Dual - N 24 12 8 6.2 20.8 1.3 - - 8.9 11.8 - - - 12.5
AON5820 Full Production - DFN2x5_6L Common-Drain - N 20 12 10 8 1.7 1 - - 9.5 13 - - - 12.5
AO8804 Obsolete - TSSOP-8 Dual - N 20 12 8 6.3 1.5 1.08 - 13 14 19 27 - - 19.8
AO8808A Full Production - TSSOP-8 Dual - N 20 12 8 6.3 1.4 1 0 14 15 20 28 0 - 16
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