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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO4838 Full Production - SOIC-8 - 30 20 11 9 2 1.3 - 9.6 13 - - - - 8
AO4840 Full Production - SOIC-8 - 40 20 6 5 2 1.28 - 30 38 - - - - 4.3
AO4842 Full Production - SOIC-8 - 30 20 7.7 6.5 2 1.44 - 22 32 - - - - 3.5
AO4852 Last Time Buy - SOIC-8 - 60 20 3 2.4 1.4 0.9 - 90 105 - - - - 3.6
AO4882 Full Production - SOIC-8 - 40 20 8 6 2 1.3 - 19 27 - - - - 3
AO4886 Last Time Buy - SOIC-8 - 100 20 3.3 2.7 2 1.28 - 80 91 - - - - 8.1
AO7801 Full Production - SC-70-6L - -20 8 -0.6 -0.48 0.3 0.19 0 0 520 700 950 0 - 1.44
AO8807 Last Time Buy - TSSOP-8 - -12 8 -6.5 -5 1.4 0.9 - - 20 24 30 36 - 19
AOC2806 New - AlphaDFN1.7x1.7_4L - 20 12 4.5 - 0.7 - - - 18 29 - - - 12.5
AON6816 Full Production - DFN5x6_8L EP2 - 30 20 16 13 21 8 - 6.2 9.6 - - - - 19.7
AON6978 Full Production - DFN5x6B_8L EP2 - 30 20 28 22 31 12 - 5.7 9.4 - - - - 6.8
Full Production - DFN5x6B_8L EP2 - 30 12 36 28 33 13 - 3.8 4.9 - - - - 20.6
AON6992 New - DFN5x6D_8L EP2S - 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
New - DFN5x6D_8L EP2S - 30 12 85 67 45 18 - 2 2.5 - - - - 21
AON6994 New - DFN5x6D_8L EP2S - 30 20 50 31 21 8 - 5.2 8.6 - - - - 6.1
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