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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO4612 Full Production - SOIC-8 Dual - P -60 20 -3.2 -2.6 2 1.28 0 105 135 0 0 0 - 8
Full Production - SOIC-8 Dual - N 60 20 4.5 3.6 2 1.28 0 56 77 0 0 0 - 4.3
AO4614A Not For New Designs AO4614B SOIC-8 Complementary - N 40 20 6 5 2 1.28 - 31 45 - - - - 4.2
Not For New Designs AO4614B SOIC-8 Complementary - P -40 20 -5 -4 2 1.28 - 45 63 - - - - 6.8
AO4614B Full Production - SOIC-8 Dual - P -40 20 -5 -4 2 1.28 - 45 63 - - - - 17
Full Production - SOIC-8 Dual - N 40 20 6 5 2 1.28 - 30 38 - - - - 8.9
AO4616 Full Production - SOIC-8 Complementary - P -30 20 -7 -6 2 1.3 - 22 40 - - - - 9.6
Full Production - SOIC-8 Complementary - N 30 20 8 6.5 2 1.3 - 20 28 - - - - 7.5
AO4620 Full Production - SOIC-8 Complementary - N 30 20 7.2 6.2 2 1.44 - 24 36 - - - - 3.5
Full Production - SOIC-8 Complementary - P -30 20 -5.3 -4.5 2 1.44 - 32 55 - - - - 6.7
AO4624 Obsolete - SOIC-8 Complementary - N 30 20 6.9 5.8 2 1.44 - 28 42 - - - - 6.74
Obsolete - SOIC-8 Complementary - P -30 20 -6 -5 2 1.44 - 35 58 - - - - 9.6
AO4627 Full Production - SOIC-8 - 30 20 4.5 3.5 2 1.3 - 50 68 - - - - 2
Full Production - SOIC-8 Complementary - P -30 20 -3.5 -2.5 2 1.3 - 100 165 - - - - 2.2
AO4629 Full Production - SOIC-8 Complementary - P -30 20 -5.5 -4.5 2 1.3 - 41 74 - - - - 4.6
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