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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AONP36336 New - DFN3.3x3.3B-8L EP Asymmetric N 30 12 50 33 4.7 5.7 - - 8
New - DFN3.3x3.3B-8L EP Asymmetric N 30 12 50 30 5.8 7.3 - - 6
AONY36356 New - DFN5x6B-8L EP2_P Asymmetric N 30 12 32 33 3.8 4.7 - - 13.5
New - DFN5x6B-8L EP2_P Asymmetric N 30 20 32 22 6.1 9.6 - - 6
AO4914 Full Production - SOIC-8L Asymmetric N 30 20 8.5 2 20.5 28 - - 7.5
Full Production - SOIC-8L Asymmetric N 30 20 8.5 2 20.5 28 - - 7.5
AO4924 Full Production - SOIC-8L Asymmetric N 30 12 9 2 15.8 19.5 - - 12
Full Production - SOIC-8L Asymmetric N 30 12 7.3 2 24 29 - - 10
AOE6930 Full Production - DFN5x6E-8L Asymmetric N 30 20 22 24 4.3 7 - - 7
Full Production - DFN5x6E-8L Asymmetric N 30 12 85 75 0.83 1.05 - - 42
AOE6932 Full Production - DFN5x6E-8L Asymmetric N 30 20 55 24 5 8 - - 7.5
Full Production - DFN5x6E-8L Asymmetric N 30 12 85 52 1.4 1.8 - - 30
AOE6936 Full Production - DFN5x6E-8L Asymmetric N 30 20 55 24 5 8 - - 7.5
Full Production - DFN5x6E-8L Asymmetric N 30 20 85 39 2 3 - - 15
AON6906A Full Production - DFN5x6B-8L EP2_P Asymmetric N 30 20 48 45 11.7 17.5 - - 3.5
Full Production - DFN5x6B-8L EP2_P Asymmetric N 30 20 37 31 14.4 21.3 - - 3.3
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