.SUBCKT AON7406 4 1 2
M1  10 5 7 8  NMOS W=556190u  L=1u 
M2  8  5 8 10  PMOS W=1312500u  L=0.8u
R1  4 10      RTEMP 6.0E-3
CGS 5 7     540E-12
* RGS 1 2     1M
R2  7 8     0.1E3
*CBS 8 7     210E-12
*R3  9 4     0.73E-3
* CDB 4 5     5E-12
* Parasitic Body BJT: E: 7, B: 8, C: 9
DBD   7 10 DBD
RG  6 5 0.7
LG  1 6 1n
LS  2 7 1n
* BC breakdown by avalanche diode
*********************************************************************
.MODEL  NMOS       NMOS  (LEVEL  = 5               TOX    = 4.5E-8
+ RS     = 3E-4           RD     = 0               VTO=1.4  
+ UO =  800	  THETA  = 0.1            NSUB=2e16	
+ VMAX   = 8E6            XJ     = 5.1E-7          LAMBDA=1.5
+ ETA    = 0              TPG    = 1  
+ IS     = 0              LD     = 0                           
+ CGSO   = 0              CGDO   = 0               CGBO   = 0 )
**********************************************************************
.MODEL  PMOS       PMOS (LEVEL   = 3               TOX    = 4.5E-8
+NSUB    = 2E16  NSS=-4E11 TPG    = -1)   
**********************************************************************
*.MODEL QBODY NPN (IS=1.2E-18   Xti=0     Eg=1.11  
*+BR=1   CJC=80E-12    MJC=0.35  
*+TR=3E-9 XTB=0 VJC=0.55  	)

.MODEL DBD D (CJO=40E-12     VJ=0.6    M=0.01
+RS=0.005 FC=0.5 IS=1E-12 TT=1.5E-12 N=1.0 BV=36 IBV=1E-4)		
									

**********************************************************************
.MODEL RTEMP RES (TC1=3.6E-3   TC2=1E-6)
**********************************************************************
.ENDS