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AOS 推出用于 USB3.2和 Thunderbolt 3.0 线路保护的超低电容 TVS 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AO4862 Full Production - SOIC-8L Dual N 30 20 4.5 1.7 50 68 - - 2
AO4862E Full Production - SOIC-8L Dual N 30 20 4.5 1.7 46 65 - - 2
AO4882 Full Production - SOIC-8L Dual N 40 20 8 2 19 27 - - 3
AO4884 Full Production - SOIC-8L Dual N 40 20 10 2 13 16 - - 13.6
AO4892 Full Production - SOIC-8L Dual N 100 20 4 2 68 94 - - 3
AO6800 Full Production - TSOP-6 Dual N 30 12 3.4 1.15 60 70 90 - 4.7
AO6802 Full Production - TSOP-6 Dual N 30 20 3.5 1.15 50 70 - - 2
AO6804A Full Production - TSOP-6 Dual N 20 12 5 1.3 - 28 39 - 5.8
AO7800 Full Production - SC-70-6L Dual N 20 8 0.9 0.3 - 300 350 450 1.57
AO8801A Full Production - TSSOP-8 Dual P -20 8 -4.5 1.5 - 42 54 68 9.3
AO8808A Full Production - TSSOP-8 Dual N 20 12 8 1.4 14 15 20 28 16
AO9926B Full Production - SOIC-8L Dual N 20 12 7.6 2 23 26 34 52 6
AO9926C Full Production - SOIC-8L Dual N 20 12 7.6 2 23 26 34 52 6
AOMU66414Q Full Production - DFN8x6-8L EP2_P Dual N 40 20 85 68 2.3 3.5 - - 18
Full Production - DFN8x6-8L EP2_P Dual N 40 20 85 65 2.3 3.5 - - 18
AON2801 Full Production - DFN2x2-6L Dual P -20 8 -3 1.1 - 120 160 200 5
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