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AOS 推出用于 USB3.2和 Thunderbolt 3.0 线路保护的超低电容 TVS 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AONP36336 New - DFN3.3x3.3B-8L EP Asymmetric N 30 12 50 33 4.7 5.7 - - 8
New - DFN3.3x3.3B-8L EP Asymmetric N 30 12 50 30 5.8 7.3 - - 6
AONR21117 New - DFN3x3A-8L Single P -20 8 -34 43 - 4.8 7.2 - 63
AONS32100 New - DFN5x6-8L EP1 Single N 25 20 400 250 0.73 1.08 - - 115
AONS32310 New - DFN5x6-8L EP1 Single N 30 20 390 250 1.05 1.43 - - 110
AONS36314 New - DFN5x6-8L EP1 Single N 30 12 85 42 2.9 3.5 - - 11.5
AONS36316 New - DFN5x6-8L EP1 Single N 30 12 32 26 4.1 4.9 - - 13.5
AONS66614 New - DFN5x6-8L EP1_P Single N 60 20 85 78 2.9 4.1 - - 25
AONS66917 New - DFN5x6-8L EP1 Single N 100 20 100 - 3.5 5 - - 35
AONS66920 New - DFN5x6-8L EP1 Single N 100 20 48 56.5 8.2 10.7 - - 16.7
AONS67614 New - DFN5x6-8L EP1 Single N 60 20 85 78 2.9 4.1 - - 25
AONS67916 New - DFN5x6-8L EP1_P Single - 100 20 100 215 3.6 - - - 95
AONY36356 New - DFN5x6B-8L EP2_P Asymmetric N 30 12 32 33 3.8 4.7 - - 13.5
New - DFN5x6B-8L EP2_P Asymmetric N 30 20 32 22 6.1 9.6 - - 6
AOSD21307 New - SOIC-8L Dual P -30 25 -9 2 16 28 - - 17
AOSD32334C New - SOIC-8L Dual N 30 20 7 1.7 20 26 - - 6
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