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AOS 推出用于 USB3.2和 Thunderbolt 3.0 线路保护的超低电容 TVS 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AONE36132 Full Production - DFN3.3x3.3A-8L EP Asymmetric N 25 12 60 35.5 1.4 1.7 - - 25
AONP36336 New - DFN3.3x3.3B-8L EP Asymmetric N 30 12 50 33 4.7 5.7 - - 8
New - DFN3.3x3.3B-8L EP Asymmetric N 30 12 50 30 5.8 7.3 - - 6
AON4407 Full Production - DFN3x2A-8L NEP Single P -12 8 -9 2.5 - 20 25 31 19
AON4420L Full Production - DFN3x2A-8L NEP Single N 30 20 10 1.6 19 25 - - 4.6
AON4421 Full Production - DFN3x2A-8L NEP Single P -30 20 -8 2.5 26 34 - - 8.6
AON4703 Full Production - DFN3x2A-8L NEP Single P -20 8 -3.4 1.7 - 90 120 160 6.1
AON4803 Full Production - DFN3x2A-8L NEP Dual P -20 8 -3.4 1.7 - 90 120 165 6.1
AON4805L Full Production - DFN3x2A-8L NEP Dual P -20 8 -4.5 2 - 65 85 115 8.5
AON3402 Full Production - DFN3x3-8L Single N 20 12 12 3 13 17 26 - 17.9
AON3414 Full Production - DFN3x3-8L Single N 30 20 10.5 3.1 17 23 - - 7.5
AON3419 Full Production - DFN3x3-8L Single P -30 20 -10 3.1 19 32 - - 9.6
AON3611 Full Production - DFN3x3-8L Complementary N 30 20 5 2.1 50 70 - - 2
Full Production - DFN3x3-8L Complementary P -30 20 -6 2.5 38 62 - - 4.6
AON3814 Full Production - DFN3x3-8L Common Drain N 20 12 6 2.5 - 17 24 - 11
AON3816 Full Production - DFN3x3-8L Common Drain N 20 12 4 2.5 - 22 28 - 11
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