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AOS 推出用于 USB3.2和 Thunderbolt 3.0 线路保护的超低电容 TVS 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AON4420L Full Production - DFN3x2A-8L NEP Single N 30 20 10 1.6 19 25 - - 4.6
AON5802B Obsolete - DFN2x5-6L Common Drain N 30 12 7.2 1.6 - 19 30 - 7.5
AOSD32334C New - SOIC-8L Dual N 30 20 7 1.7 20 26 - - 6
AO4484 Full Production - SOIC-8L Single N 40 20 10 1.7 10 12.5 - - 13.6
AO4485 Full Production - SOIC-8L Single P -40 20 -10 1.7 15 20 - - 18.6
AO4862 Full Production - SOIC-8L Dual N 30 20 4.5 1.7 50 68 - - 2
AO4862E Full Production - SOIC-8L Dual N 30 20 4.5 1.7 46 65 - - 2
AON4703 Full Production - DFN3x2A-8L NEP Single P -20 8 -3.4 1.7 - 90 120 160 6.1
AON4803 Full Production - DFN3x2A-8L NEP Dual P -20 8 -3.4 1.7 - 90 120 165 6.1
AON5816 Full Production - DFN2x5A-6L Common Drain N 20 12 12 1.7 - 6.5 8.5 - 22
AON5820 Full Production - DFN2x5-6L Common Drain N 20 12 10 1.7 - 9.5 13 - 12.5
AON1634 Full Production - DFN1.6x1.6A-6L Single N 30 12 4 1.8 54 62 82 - 2.6
AOSD21307 New - SOIC-8L Dual P -30 25 -9 2 16 28 - - 17
AO4606 Full Production - SOIC-8L Complementary N 30 20 6 2 30 42 - - 2.55
Full Production - SOIC-8L Complementary P -30 20 -6.5 2 28 44 - - 6.7
AO4612 Full Production - SOIC-8L Complementary N 60 20 4.5 2 56 77 - - 4.3
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