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AOS 推出用于 USB3.2和 Thunderbolt 3.0 线路保护的超低电容 TVS 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AONU32320 Full Production - DFN3x3-8L EP2_P Dual N 30 20 15 16.5 13 18.5 - - 13
AONR21117 New - DFN3x3A-8L Single P -20 8 -34 43 - 4.8 7.2 - 63
AONR36366 Full Production - DFN3x3A-8L Single N 30 20 34 28 3.5 5.2 - - 11
AONR36368 Full Production - DFN3x3A-8L Single N 30 20 32 24 5 7.3 - - 7.5
AONR66406 Full Production - DFN3x3A-8L Single N 40 20 30 27 6.1 9.4 - - 8.5
AON7466 Full Production - DFN3x3A-8L EP1_P Single N 30 25 30 25 7.5 10.5 - - 9.5
AON7934 Full Production - DFN3x3A-8L EP2 Asymmetric N 30 20 16 23 10.2 15.8 - - 3.9
Full Production - DFN3x3A-8L EP2 Asymmetric N 30 20 18 25 7.7 11.6 - - 6
AON3820 Full Production - DFN3x3A-8L NEP_P Dual N 24 12 8 2 - 8.9 11.8 - 12.5
AONL32328 New - DFN4x3A-12L Complementary P -30 20 -7 2.6 27 45 - - 12
New - DFN4x3A-12L Complementary N 30 20 8 2.6 21 32 - - 7
AONS32100 New - DFN5x6-8L EP1 Single N 25 20 400 250 0.73 1.08 - - 115
AONS32310 New - DFN5x6-8L EP1 Single N 30 20 390 250 1.05 1.43 - - 110
AONS36314 New - DFN5x6-8L EP1 Single N 30 12 85 42 2.9 3.5 - - 11.5
AONS36316 New - DFN5x6-8L EP1 Single N 30 12 32 26 4.1 4.9 - - 13.5
AONS66917 New - DFN5x6-8L EP1 Single N 100 20 100 - 3.5 5 - - 35
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