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AOS 推出用于 USB3.2和 Thunderbolt 3.0 线路保护的超低电容 TVS 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AON6994 Full Production - DFN5x6D-8L EP2_S Asymmetric N 30 20 50 21 5.2 8.6 - - 6.1
Full Production - DFN5x6D-8L EP2_S Asymmetric N 30 12 82 31 2.8 3.5 - - 17
AON6996 Full Production - DFN5x6D-8L EP2_P Asymmetric N 30 20 50 21 5.2 8.6 - - 6.1
Full Production - DFN5x6D-8L EP2_P Asymmetric N 30 12 60 22 3.9 5 - - 10.5
AON6998 Full Production - DFN5x6D-8L EP2_S Asymmetric N 30 20 50 21 5.2 8.6 - - 6.1
Full Production - DFN5x6D-8L EP2_S Asymmetric N 30 12 82 31 2.6 2.99 - - 17
AON7934 Full Production - DFN3x3A-8L EP2 Asymmetric N 30 20 16 23 10.2 15.8 - - 3.9
Full Production - DFN3x3A-8L EP2 Asymmetric N 30 20 18 25 7.7 11.6 - - 6
AONE36132 Full Production - DFN3.3x3.3A-8L EP Asymmetric N 25 12 60 25 4.6 6 - - 6.5
Full Production - DFN3.3x3.3A-8L EP Asymmetric N 25 12 60 35.5 1.4 1.7 - - 25
AONX38168 Full Production - DFN5x6E-8L Dual N 25 12 85 69 0.85 1.15 - - 25
Full Production - DFN5x6E-8L Dual N 25 12 60 20 3.6 5 - - 6.5
AONY36352 Full Production - DFN5x6D-8L EP2_P Asymmetric N 30 20 49 21 5.3 9.1 - - 5
Full Production - DFN5x6D-8L EP2_P Asymmetric N 30 12 85 45 2 2.5 - - 16
AONY36354 Full Production - DFN5x6D-8L EP2_P Asymmetric N 30 20 49 21 5.3 9.1 - - 5
Full Production - DFN5x6D-8L EP2_P Asymmetric N 30 12 85 31.5 2.6 3.5 - - 11.5
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