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Alpha and Omega Semiconductor Announces Shield Gate Technology Generation 2 100V 3.6mOhm MOSFET for High-Density Power Supply Solutions 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended Replacement Package Configuration Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 70°C 25°C 70°C 20V 10V 4.5V 2.5V 1.8V 1.5V 1.2V
V V A A W W mΩ mΩ mΩ mΩ mΩ mΩ mΩ
AO5804E Obsolete - SC-89-6L Dual - N 20 8 0.5 0.5 0.38 0.24 - - 550 680 800 - - 0.63
AO5800E Obsolete - SC-89-6L Dual - N 60 20 0.4 0.3 0.4 0.24 - 1,600 1,900 - - - - 1
AO7801 Full Production - SC-70-6L - -20 8 -0.6 -0.48 0.3 0.19 0 0 520 700 950 0 - 1.44
AO7800 Full Production - SC-70-6L Dual - N 20 8 0.9 0.7 0.3 0.19 0 0 300 350 450 0 - 1.57
AO4862 Full Production - SOIC-8 Dual - N 30 20 4.5 3.5 1.7 1.1 - 50 68 - - - - 2
AO6802 Full Production - TSOP-6 Dual - N 30 20 3.5 3 1.15 0.73 0 50 70 0 0 0 - 2
AO6810 Obsolete AO6802 TSOP-6 - 30 20 3.5 3 1.15 0.73 - 50 70 - - - - 2
AON2810 Full Production - DFN2x2A_6L Dual - N 30 12 2 1.6 2.5 1.6 - 44 52 74 - - - 2.2
AON2812 Full Production - DFN2x2A_6L Dual - N 30 12 4.5 3.5 2.5 1.6 - 37 45 70 - - - 2.2
AON7932 Not For New Designs AON7934 DFN3x3A_8L EP2 Asymmetric Dual - N 30 20 26 16 23 9 - 20 30 - - - - 2.3
AO4812 Full Production - SOIC-8 Dual - N 30 20 6 5 2 1.3 - 30 42 - - - - 2.55
AON2802 Full Production - DFN2x2A_6L Dual - N 30 12 2 1.6 2.1 1.3 - 60 68 - - - - 2.6
AO4892 Full Production - SOIC-8 Dual - N 100 20 4 3 2 1.3 - 68 94 - - - - 3
AO4882 Full Production - SOIC-8 - 40 20 8 6 2 1.3 - 19 27 - - - - 3
AON6906A Full Production - DFN5x6B_8L EP2 Asymmetric Dual - N 30 20 37 23 31 12.5 - 14.4 21.3 - - - - 3.3
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