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Alpha and Omega Semiconductor Announces Shield Gate Technology Generation 2 100V 3.6mOhm MOSFET for High-Density Power Supply Solutions more »



Part Number Status Package Configuration VCE (max) IC (max) VCE(sat) (typ) EON EOFF Qg VF Qrr Irm
25°C 100°C
V A A V mJ mJ nC V µC A
AOB5B60D New TO263 IGBT with Anti-Parallel Diode 600 10 5 1.55 0.14 0.04 9.4 1.46 - 4.4

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