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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AONL32328 New - DFN4x3A-12L Complementary P -30 20 -7 2.6 27 45 - - 12
New - DFN4x3A-12L Complementary N 30 20 8 2.6 21 32 - - 7
AO4606 Full Production - SOIC-8L Complementary N 30 20 6 2 30 42 - - 2.55
Full Production - SOIC-8L Complementary P -30 20 -6.5 2 28 44 - - 6.7
AO4612 Full Production - SOIC-8L Complementary N 60 20 4.5 2 56 77 - - 4.3
Full Production - SOIC-8L Complementary P -60 20 -3.2 2 105 135 - - 8
AO4614B Full Production - SOIC-8L Complementary N 40 20 6 2 30 38 - - 4.3
Full Production - SOIC-8L Complementary P -40 20 -5 2 45 63 - - 7.9
AO4616 Full Production - SOIC-8L Complementary P -30 20 -7 2 22 40 - - 9.6
Full Production - SOIC-8L Complementary N 30 20 8.5 2 20 28 - - 7.5
AO4620 Full Production - SOIC-8L Complementary N 30 20 7.2 2 24 36 - - 3.5
Full Production - SOIC-8L Complementary P -30 20 -5.3 2 32 55 - - 6.7
AO4627 Full Production - SOIC-8L Complementary N 30 20 4.5 2 50 68 - - 2
Full Production - SOIC-8L Complementary P -30 20 -3.5 2 100 165 - - 2.2
AO4629 Full Production - SOIC-8L Complementary P -30 20 -5.5 2 41 74 - - 4.6
Full Production - SOIC-8L Complementary N 30 20 6 2 30 42 - - 2.55
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