Powering a Greener Future ™

产品搜索分类

工具

焦点产品

AOS推出采用 Shield Gate 技术的最新 80V 功率 MOSFET 详情 »

产品

IGBTs

Part Number Status Package Configuration VCE (max) IC (max) VCE(sat)
(typ)		 EON EOFF Qg VF Qrr Irm
25°C 100°C
V A A V mJ mJ nC V µC A
AOTF8B65MQ1 New TO220F IGBT with Anti-Parallel Diode 650 16 8 1.8 0.16 0.11 22 1.52 0.2 3.49
AOB10B60D Full Production TO263 IGBT with Anti-Parallel Diode 600 20 10 1.53 0.26 0.07 17.4 1.52 0.25 5
AOB10B65M1 Full Production TO263 IGBT with Anti-Parallel Diode 650 20 10 1.6 0.18 0.13 24 1.9 0.4 3.8
AOB15B60D Full Production TO263 IGBT with Anti-Parallel Diode 600 30 15 1.6 0.42 0.11 25.4 1.43 0.48 5.8
AOB15B65M1 Full Production TO263 IGBT with Anti-Parallel Diode 650 30 15 1.7 0.29 0.2 32 1.77 0.7 4.7
AOB15B65MQ1 Full Production TO263 IGBT with Anti-Parallel Diode 650 30 15 1.7 0.29 0.2 32 1.65 0.24 3.7
AOB20B65M1 Full Production TO263 IGBT with Anti-Parallel Diode 650 40 20 1.7 0.47 0.27 46 1.66 0.8 5.2
AOB5B60D Full Production TO263 IGBT with Anti-Parallel Diode 600 10 5 1.55 0.14 0.04 9.4 1.46 0.23 4.4
AOB5B65M1 Full Production TO263 IGBT with Anti-Parallel Diode 650 10 5 1.57 0.08 0.07 14 1.8 0.24 2.78
AOD5B60D Full Production TO252 IGBT with Anti-Parallel Diode 600 10 5 1.55 0.14 0.04 9.4 1.46 0.23 4.4
AOD5B65M1 Full Production TO252 IGBT with Anti-Parallel Diode 650 10 5 1.57 0.08 0.07 14 1.8 0.24 2.78
AOD5B65MQ1E Full Production TO252 IGBT with Anti-Parallel Diode 650 10 - 2.15 0.09 0.06 8.8 2.06 0.11 2.46
AOD5B65N1 Full Production TO252 IGBT with Anti-Parallel Diode 650 10 5 2.5 0.081 0.049 9.2 2.13 0.19 2.5
AOD6B65MQ1E Full Production TO252 IGBT with Anti-Parallel Diode 650 12 8 1.9 0.11 0.08 13.5 1.81 0.13 2.61
AOD7B65M3 Full Production TO252 IGBT with Anti-Parallel Diode 650 14 7 1.87 0.108 0.099 14 2.6 0.29 3
AOD8B65MQ1 Full Production TO252 IGBT with Anti-Parallel Diode 650 16 8 1.8 0.16 0.11 22 1.9 0.2 3.49
« First   « Previous Page: 1 2 3 4 5 6   Next »   Last »
网站地图 网站使用条例 销售条款 隐私 联系我们

Copyright © 2021 Alpha and Omega Semiconductor. 保留所有权利。