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AOD210V60E
高压MOSFET (500V - 1000V)
600V, aMOSE™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOD210V60E Datasheet | Datasheets | 2024-03-13 | |
| AOD210V60E Marking | Markings | 2024-04-10 | |
| AOD210V60E Reliability Report | Reliability Reports | 2024-04-10 | |
| TO252 | Package | 2024-04-09 | |
| TO252 Tape & Reel | Tape & Reel | 2024-01-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOD210V60E Datasheet | Datasheets | 2024-03-13 | |
| AOD210V60E Marking | Markings | 2024-04-10 | |
| AOD210V60E Reliability Report | Reliability Reports | 2024-04-10 | |
| TO252 | Package | 2024-04-09 | |
| TO252 Tape & Reel | Tape & Reel | 2024-01-11 |
Parametrics
Status | New |
Package | TO252 |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 20 |
ID @ 25°C (A) | 15 |
PD @ 25°C (W) | 125 |
RDS(ON) max (mΩ) at VGS= 10V | 210 |
Qg (10V)(nC) | 22 |
VGS(th) max (V) | 4.60 |
Ciss (pF) | 1560 |
Coss (pF) | 60 |
Crss (pF) | 7.50 |
Qgd (nC) | 6 |
tD(on) (ns) | 24 |
tD(off) (ns) | 38 |
Trr (ns) | 190 |
Qrr (nC) | 1600 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| TO252 | 6.6x10.41x2.29 | Tape and Reel |