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AOS 推出用于 USB3.2和 Thunderbolt 3.0 线路保护的超低电容 TVS 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AOB66613L New - TO263 Single N 60 20 120 260 2.5 - - - 78
AOB66916L New - TO263 Single N 100 20 120 277 3.6 - - - 78
AOB66920L New - TO263 Single N 100 20 80 100 8 10.5 - - 16.7
AOCA32106E New - AlphaDFN1.84x1.96-10L Common Drain N 12 8 25 2.8 - 3.4 5.3 - 23
AOCA36102E New - AlphaDFN3.4x1.96-10L Common Drain N 22 12 30 3.1 - 2.8 4.6 - 37
AOD21357 New - TO252 Single P -30 25 -70 78 8 13 - - 35
AOD32334C New - TO252 Single N 30 20 12 18 20 26 - - 55
AOD66616 New - TO252 Single N 60 20 70 113 3.7 - - - 42.5
AOD66920 New - TO252 Single N 100 20 70 89 8.2 10.7 - - 16.7
AOE66410 New - DFN5x6A-8L Single N 40 20 100 147 1 1.5 - - 50
AOI21357 New - TO251A Single P -30 25 -70 78 8 13 - - 35
AOK66613 New - TO247 Single N 60 20 120 312 2.5 - - - 78
AOND62930 New - DFN5x6-8L EP2 Dual N 100 20 7 7.3 68 94 - - 3
AONP36336 New - DFN3.3x3.3B-8L EP Asymmetric N 30 12 50 33 4.7 5.7 - - 8
New - DFN3.3x3.3B-8L EP Asymmetric N 30 12 50 30 5.8 7.3 - - 6
AONR21117 New - DFN3x3A-8L Single P -20 8 -34 43 - 4.8 7.2 - 63
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