AON2411
P沟道MOSFET (8V - 60V)
Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。
- Datasheets
- Markings
- Package
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AON2411 Datasheet | Datasheets | 2019-02-12 | |
| AON2411 Marking | Markings | 2019-02-12 | |
| DFN2x2C_8L_EP1_S | Package | 2022-10-20 | |
| DFN2x2C_8L_EP1_S Tape & Reel | Tape & Reel | 2024-03-14 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AON2411 Datasheet | Datasheets | 2019-02-12 | |
| AON2411 Marking | Markings | 2019-02-12 | |
| DFN2x2C_8L_EP1_S | Package | 2022-10-20 | |
| DFN2x2C_8L_EP1_S Tape & Reel | Tape & Reel | 2024-03-14 |
Parametrics
Status | Obsolete |
Package | DFN2x2-8L |
Configuration | Single |
Polarity | P |
VDS (V) | -12 |
VGS (±V) | 8 |
RDS(ON) max (mΩ) at VGS= 4.5V | 8 |
RDS(ON) max (mΩ) at VGS= 2.5V | 11.60 |
RDS(ON) max (mΩ) at VGS= 1.8V | 17.50 |
ID @ 25°C (A) | -20 |
PD @ 25°C (W) | 5 |
Qg (4.5V)(nC) | 20 |
VGS(th) max (V) | -0.90 |
Ciss (pF) | 2180 |
Coss (pF) | 675 |
Crss (pF) | 425 |
Qgd (nC) | 5.50 |
tD(on) (ns) | 15 |
tD(off) (ns) | 135 |
Trr (ns) | 28 |
Qrr (nC) | 13 |
Qualification | Industrial |
ESD Diode | Yes |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN2x2C_8_EP1_S | 2.0x2.0x0.75 | Tape and Reel |