AO6409
P沟道MOSFET (8V - 60V)
Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO6409 Datasheet | Datasheets | 2019-02-12 | |
| AO6409 Marking | Markings | 2019-02-12 | |
| AO6409 Reliability Report | Reliability Reports | 2019-02-12 | |
| TSOP6 | Package | 2020-08-05 | |
| TSOP6 Tape & Reel | Tape & Reel | 2020-08-05 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO6409 Datasheet | Datasheets | 2019-02-12 | |
| AO6409 Marking | Markings | 2019-02-12 | |
| AO6409 Reliability Report | Reliability Reports | 2019-02-12 | |
| TSOP6 | Package | 2020-08-05 | |
| TSOP6 Tape & Reel | Tape & Reel | 2020-08-05 |
Parametrics
Status | Obsolete |
Replacement Parts | AOTS21115C |
Package | TSOP-6L |
Configuration | Single |
Polarity | P |
VDS (V) | -20 |
VGS (±V) | 8 |
RDS(ON) max (mΩ) at VGS= 4.5V | 41 |
RDS(ON) max (mΩ) at VGS= 2.5V | 53 |
RDS(ON) max (mΩ) at VGS= 1.8V | 65 |
ID @ 25°C (A) | -5.50 |
PD @ 25°C (W) | 2.10 |
Qg (4.5V)(nC) | 9.30 |
VGS(th) max (V) | -0.90 |
Ciss (pF) | 751 |
Coss (pF) | 115 |
Crss (pF) | 80 |
Qgd (nC) | 2.20 |
tD(on) (ns) | 13 |
tD(off) (ns) | 19 |
Trr (ns) | 26 |
Qrr (nC) | 51 |
Qualification | Industrial |
ESD Diode | Yes |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| TSOP6 | 2.90x2.80 | Tape and Reel |