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AOD4189

AOD4189

P沟道MOSFET (8V - 60V)

P-Channel Enhancement Mode Field Effect Transistor

  • Datasheets
  • Markings
  • Package
  • Reliability Reports
  • Tape & Reel
Download Selected
Documentation
TitleTypeDateFile
AOD4189 DatasheetDatasheets2019-02-12PDF
AOD4189 MarkingMarkings2019-02-12PDF
AOD4189 Reliability ReportReliability Reports2021-05-20PDF
TO252Package2024-04-09PDF
TO252 Tape & ReelTape & Reel2024-01-11PDF
Documentation
TitleTypeDateFile
AOD4189 DatasheetDatasheets2019-02-12PDF
AOD4189 MarkingMarkings2019-02-12PDF
AOD4189 Reliability ReportReliability Reports2021-05-20PDF
TO252Package2024-04-09PDF
TO252 Tape & ReelTape & Reel2024-01-11PDF
Parametrics
Status
Full Production
Package
TO252
Configuration
Single
Polarity
P
VDS (V)
-40
VGS (±V)
20

RDS(ON) max (mΩ) at VGS= 10V

22

RDS(ON) max (mΩ) at VGS= 4.5V

29
ID @ 25°C (A)
-40
PD @ 25°C (W)
62.50
Qg (4.5V)(nC)
7.90
Qg (10V)(nC)
31.40
VGS(th) max (V)
-3
Ciss (pF)
1870
Coss (pF)
185
Crss (pF)
155
Qgd (nC)
6.20
tD(on) (ns)
10
tD(off) (ns)
38
Trr (ns)
32
Qrr (nC)
30
Qualification
Industrial
ESD Diode
No
Tj max (°C)
175
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
TO252 6.6x10.41x2.29PDFTape and Reel