AO4443
P沟道MOSFET (8V - 60V)
40V P-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4443 Datasheet | Datasheets | 2019-02-12 | |
| AO4443 Marking | Markings | 2019-02-12 | |
| AO4443 Reliability Report | Reliability Reports | 2019-02-12 | |
| SO8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4443 Datasheet | Datasheets | 2019-02-12 | |
| AO4443 Marking | Markings | 2019-02-12 | |
| AO4443 Reliability Report | Reliability Reports | 2019-02-12 | |
| SO8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Parametrics
Status | Full Production |
Package | SO8 |
Configuration | Single |
Polarity | P |
VDS (V) | -40 |
VGS (±V) | 20 |
RDS(ON) max (mΩ) at VGS= 10V | 42 |
RDS(ON) max (mΩ) at VGS= 4.5V | 63 |
ID @ 25°C (A) | -6 |
PD @ 25°C (W) | 3.10 |
Qg (4.5V)(nC) | 8.40 |
Qg (10V)(nC) | 17.30 |
VGS(th) max (V) | -2.60 |
Ciss (pF) | 940 |
Coss (pF) | 97 |
Crss (pF) | 72 |
Qgd (nC) | 4.30 |
tD(on) (ns) | 10.30 |
tD(off) (ns) | 39 |
Trr (ns) | 17 |
Qrr (nC) | 11.50 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| SO8 | 4.9x3.9x1.65 | Tape and Reel |