AOT430
中压MOSFET (40V - 400V)
N-Channel Enhancement Mode Field Effect Transistor
- Datasheets
- Markings
- Package
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOT430 Datasheet | Datasheets | 2019-02-12 | |
| AOT430 Marking | Markings | 2019-02-12 | |
| TO220 | Package | 2020-08-11 | |
| TO220 Tape & Reel | Tape & Reel | 2023-10-06 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOT430 Datasheet | Datasheets | 2019-02-12 | |
| AOT430 Marking | Markings | 2019-02-12 | |
| TO220 | Package | 2020-08-11 | |
| TO220 Tape & Reel | Tape & Reel | 2023-10-06 |
Parametrics
Status | Full Production |
Package | TO220 |
Configuration | Single |
Polarity | N |
VDS (V) | 75 |
VGS (±V) | 25 |
RDS(ON) max (mΩ) at VGS= 10V | 11.50 |
ID @ 25°C (A) | 80 |
PD @ 25°C (W) | 268 |
Qg (10V)(nC) | 114 |
VGS(th) max (V) | 4 |
Ciss (pF) | 4700 |
Coss (pF) | 400 |
Crss (pF) | 180 |
Qgd (nC) | 18 |
tD(on) (ns) | 21 |
tD(off) (ns) | 70 |
Trr (ns) | 53 |
Qrr (nC) | 143 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 175 |