AON6413
P沟道MOSFET (8V - 60V)
Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET，其具有卓越的鲁棒性，是负载切换、电池保护和电机驱动的理想选择。
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AON6413 Datasheet | Datasheets | 2017-11-14 | |
| AON6413 Marking | Markings | 2019-02-12 | |
| AON6413 Reliability Report | Reliability Reports | 2021-05-20 | |
| DFN5x6_8L_EP1_P | Package | 2023-12-19 | |
| DFN5x6_8L_EP1_P Tape & Reel | Tape & Reel | 2024-03-05 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AON6413 Datasheet | Datasheets | 2017-11-14 | |
| AON6413 Marking | Markings | 2019-02-12 | |
| AON6413 Reliability Report | Reliability Reports | 2021-05-20 | |
| DFN5x6_8L_EP1_P | Package | 2023-12-19 | |
| DFN5x6_8L_EP1_P Tape & Reel | Tape & Reel | 2024-03-05 |
Parametrics
Status | Obsolete |
Replacement Parts | AONS21357 |
Package | DFN5x6-8L |
Configuration | Single |
Polarity | P |
VDS (V) | -30 |
VGS (±V) | 25 |
RDS(ON) max (mΩ) at VGS= 10V | 8.50 |
RDS(ON) max (mΩ) at VGS= 4.5V | 17 |
ID @ 25°C (A) | -32 |
PD @ 25°C (W) | 48 |
Qg (4.5V)(nC) | 18.50 |
VGS(th) max (V) | -2.70 |
Ciss (pF) | 2142 |
Coss (pF) | 474 |
Crss (pF) | 363 |
Qgd (nC) | 6 |
tD(on) (ns) | 13 |
tD(off) (ns) | 34 |
Trr (ns) | 17.50 |
Qrr (nC) | 44.50 |
Qualification | Industrial |
ESD Diode | Yes |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN5x6_8L_EP1_P | 5.0x6.0x0.95 | Tape and Reel |