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AOCR35101E
低压共漏电池 MOSFET
12V Common-Drain Dual N-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOCR35101E Datasheet | Datasheets | 2024-02-23 | |
| AOCR35101E Marking | Markings | 2024-02-23 | |
| AOCR35101E Reliability Report | Reliability Reports | 2024-03-04 | |
| MRigidCSP3.2x1.95-10 | Package | 2024-02-23 | |
| MRigidCSP3.2x1.95-10 Tape & Reel | Tape & Reel | 2024-02-23 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOCR35101E Datasheet | Datasheets | 2024-02-23 | |
| AOCR35101E Marking | Markings | 2024-02-23 | |
| AOCR35101E Reliability Report | Reliability Reports | 2024-03-04 | |
| MRigidCSP3.2x1.95-10 | Package | 2024-02-23 | |
| MRigidCSP3.2x1.95-10 Tape & Reel | Tape & Reel | 2024-02-23 |
Parametrics
Status | New |
Package | MRigidCSP3.2x1.95-10L |
Configuration | Common Drain |
Polarity | N |
Vss (V) | 12 |
VGS (±V) | 8 |
IS @ 25°C (A) | 45 |
PD @ 25°C (W) | 2.80 |
Qg (4.5V)(nC) | 50 |
VGS(th) max (V) | 1.20 |
tD(on) (ns) | 4.50 |
tD(off) (ns) | 3.50 |
Qualification | Industrial |
ESD Diode | Yes |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| MRigidCSP3.2x1.95-10 | 3.20x1.95x0.300 | Tape and Reel |