AO4485
P沟道MOSFET (8V - 60V)
40V P-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4485 Datasheet | Datasheets | 2024-04-17 | |
| AO4485 Marking | Markings | 2019-02-12 | |
| AO4485 Reliability Report | Reliability Reports | 2021-05-20 | |
| SO8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4485 Datasheet | Datasheets | 2024-04-17 | |
| AO4485 Marking | Markings | 2019-02-12 | |
| AO4485 Reliability Report | Reliability Reports | 2021-05-20 | |
| SO8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Parametrics
Status | Full Production |
Package | SO8 |
Configuration | Single |
Polarity | P |
VDS (V) | -40 |
VGS (±V) | 20 |
RDS(ON) max (mΩ) at VGS= 10V | 15 |
RDS(ON) max (mΩ) at VGS= 4.5V | 20 |
ID @ 25°C (A) | -10 |
PD @ 25°C (W) | 1.70 |
Qg (4.5V)(nC) | 18.60 |
Qg (10V)(nC) | 42 |
VGS(th) max (V) | -2.50 |
Ciss (pF) | 2500 |
Coss (pF) | 260 |
Crss (pF) | 180 |
Qgd (nC) | 8.60 |
tD(on) (ns) | 9.40 |
tD(off) (ns) | 55 |
Trr (ns) | 38 |
Qrr (nC) | 47 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| SO8 | 4.9x3.9x1.65 | Tape and Reel |