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AONS660A70E
高压MOSFET (500V - 1000V)
Status: Full Production
700V, αMOS5™ N-Channel Power Transistor
Parametrics
Status | Full Production |
Package | DFN5x6-8L |
Configuration | Single |
Polarity | N |
VDS (V) | 700 |
VGS (±V) | 20 |
ID @ 25°C (A) | 9 |
PD @ 25°C (W) | 138 |
RDS(ON) max (mΩ) at VGS=10V | 660 |
Qg (10V)(nC) | 13 |
VGS(th) min (V) | 2.40 |
VGS(th) typ (V) | 3 |
VGS(th) max (V) | 3.60 |
Ciss (pF) | 780 |
Coss (pF) | 1.80 |
Crss (pF) | 1.80 |
Qgd (nC) | 2.10 |
tD(on) (ns) | 15 |
tD(off) (ns) | 34 |
Trr (ns) | 240 |
Qrr (nC) | 2500 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Parametrics
Status | Full Production |
Package | DFN5x6-8L |
Configuration | Single |
Polarity | N |
VDS (V) | 700 |
VGS (±V) | 20 |
ID @ 25°C (A) | 9 |
PD @ 25°C (W) | 138 |
RDS(ON) max (mΩ) at VGS=10V | 660 |
Qg (10V)(nC) | 13 |
VGS(th) min (V) | 2.40 |
VGS(th) typ (V) | 3 |
VGS(th) max (V) | 3.60 |
Ciss (pF) | 780 |
Coss (pF) | 1.80 |
Crss (pF) | 1.80 |
Qgd (nC) | 2.10 |
tD(on) (ns) | 15 |
tD(off) (ns) | 34 |
Trr (ns) | 240 |
Qrr (nC) | 2500 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONS660A70E Datasheet | Datasheets | 2024-12-09 | |
| AONS660A70E Marking | Markings | 2024-12-09 | |
| AONS660A70E Reliability Report | Reliability Reports | 2025-11-20 | |
| DFN5x6F_8L_EP1_P | Package | 2022-09-06 | |
| DFN5x6F_8L_EP1_P Tape & Reel | Tape & Reel | 2024-03-15 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN5x6F_8L_EP1_P | 5.2x5.55x0.95 | Tape and Reel |