Alpha and Omega Semiconductor Introduces 25V and 80V MOSFETs in State-of-the-Art Packaging that Meets Increasing AI Server Power Demands
Designed to support high-power density and enhanced thermal performance, new MOSFETs in DFN 3.3x3.3 double-sided cooling source-down packaging feature center gate technology for easier routing on the PCB
SUNNYVALE, Calif., March. 17, 2026 – Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap power devices, power management ICs, and modules, today introduced its AONC40202 25V MOSFET and AONC68816 80V MOSFET that are available in state-of-the-art DFN 3.3x3.3 double-sided cooling source-down packaging. Designed to support high power density in Intermediate Bus Converters (IBC) DC-DC applications in AI Servers, the AONC40202 and AONC68816 meet the stringent thermal requirements of AI servers and data centers.
The AONC40202 and AONC68816 feature an optimized top-clip design for the exposed drain contact. This double-sided thermal interface will remove heat from the heatsinks, keeping the part cooler. Designers have found that double-sided cooling is the optimal solution to reduce heat generation and thermal stress compared to single-sided cooling devices. The packaging technology used in the AONC40402 25V and AONC68816 80V MOSFETs features a large top clip, which enables a low thermal resistance rate value of Rthc-top(max) to be 0.9°C/W.
What’s more, the AONC40202 has a continuous current capability of up to 405A, with a maximum junction temperature of 175° C. These capabilities provide significant system-level improvements such as enhanced thermal management, support higher power density, and afford increased operational efficiencies. In addition, the source-down packaging technology provides a larger source contact to the PCB, and its center-gate pin layout allows easier PCB routing, so the gate driver connection can be minimized.
“AOS designed these latest MOSFETs to specifically satisfy intensifying AI server power needs. In particular, the double-sided cooling DFN 3.3x3.3 source-down packaging delivers superior heat transfer and thermal performance compared to traditional DFN 3.3x3.3 packaging solutions. Beyond their thermal advantages, the AONC40202 and AONC68816 use the latest AlphaSGT™ Silicon Technology. This combination of enhanced thermal and Silicon technology offers AI power designers a more effective solution to increase power density while also enhancing manufacturability and overall application reliability,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS.
Technical Highlights
| Part Number | Package | VDS (V) | VGS (±V) | TJ (°C) | Rthjc Max (C/W) | Continuous Drain Current (A) @25°C | Pulsed Drain Current (A) @25°C | RDS(ON) Max (mOhms) @10V | |
|---|---|---|---|---|---|---|---|---|---|
| Top | Bottom | ||||||||
| AONC40202 | DFN3.3x3.3A | 25 | 12 | 175 | 0.9 | 1.1 | 405 | 644 | 0.7 |
| AONC68816 | DFN3.3x3.3A | 80 | 20 | 175 | 0.9 | 1.1 | 119 | 476 | 4.7 |
Pricing and Availability
The AONC40202 and AONC68816 MOSFETs are immediately available in production quantities with a lead time of 14-16 weeks. The unit prices in 1,000-piece quantities is $1.85 and 1.95, respectively.