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AONV210A60

高压MOSFET (500V - 1000V)

Status: Full Production

600V, aMOS5™ N-Channel Power Transistor

Parametrics
Status
Full Production
Package
DFN8x8-4L
Configuration
Single
Polarity
N
VDS (V)
600
VGS (±V)
20
ID @ 25°C (A)
20
PD @ 25°C (W)
208

RDS(ON) max (mΩ) at VGS= 10V

210
Qg (10V)(nC)
34
Ciss (pF)
1935
Coss (pF)
55
Crss (pF)
1.25
Qgd (nC)
8
tD(on) (ns)
80
tD(off) (ns)
80
Trr (ns)
341
Qrr (nC)
6800
Qualification
Industrial
ESD Diode
No
Tj max (°C)
150
Parametrics
Status
Full Production
Package
DFN8x8-4L
Configuration
Single
Polarity
N
VDS (V)
600
VGS (±V)
20
ID @ 25°C (A)
20
PD @ 25°C (W)
208

RDS(ON) max (mΩ) at VGS= 10V

210
Qg (10V)(nC)
34
Ciss (pF)
1935
Coss (pF)
55
Crss (pF)
1.25
Qgd (nC)
8
tD(on) (ns)
80
tD(off) (ns)
80
Trr (ns)
341
Qrr (nC)
6800
Qualification
Industrial
ESD Diode
No
Tj max (°C)
150
Documentation
TitleTypeDateFile
AONV210A60 Datasheet
Datasheets2024-04-17PDF
AONV210A60 Marking
Markings2021-01-28PDF
AONV210A60 Reliability Report
Reliability Reports2021-05-20PDF
DFN8x8_4L_EP1_S
Package2022-09-06PDF
DFN8x8_4L_EP1_S Tape & Reel
Tape & Reel2024-03-15PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN8x8_4L_EP1_S 8.0x8.0PDFTape and Reel