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AOZ5518QI

DrMOS + Smart Power Stages (SPS)

Status: Full Production

AOZ5518QI是一款采用QFN5x5封装的65A高功率DrMOS模块。 它使用PWM和FCCM输入来精确控制功率MOSFET的开关活动,兼容3V/5V逻辑,支持三态PWM。可驱动Low-Side MOSFET至二极管续流模式,以提供异步操作从而改善轻载性能。

AOZ5518QI Typ App Drawing
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Parametrics
Status
Full Production
Power Stage Type
DrMOS
Package
QFN5x5-31L
Min Vin (V)
4.50
Max Vin (V)
25
Abs Max Vin (V)
30
Max DC I (A)
65
Max Peak I (A)
120
PWM Input (V)
5
Tri-State Range (V)
1.6 - 3.4
Max Frequency (MHz)
2
Shutdown Control
FCCM=TS, PWM=TS
Enable Diode Emulation Mode
FCCM = L
Thermal Flag
No
OCP (A)
No
HSD
No
Pre-OVP
No
Parametrics
Status
Full Production
Power Stage Type
DrMOS
Package
QFN5x5-31L
Min Vin (V)
4.50
Max Vin (V)
25
Abs Max Vin (V)
30
Max DC I (A)
65
Max Peak I (A)
120
PWM Input (V)
5
Tri-State Range (V)
1.6 - 3.4
Max Frequency (MHz)
2
Shutdown Control
FCCM=TS, PWM=TS
Enable Diode Emulation Mode
FCCM = L
Thermal Flag
No
OCP (A)
No
HSD
No
Pre-OVP
No
Features
  • 输入电压范围4.5V至25V
  • 连续输出电流65A
  • 10µs开启脉冲高达120A
  • 开关频率高达2MHz
  • 兼容3V/5V PWM和三态输入
  • 支持Intel® Power State 4
  • FCCM控制用于二极管续流/CCM模式
  • 工业标准的5mm x 5mm QFN-31L封装
Documentation
TitleTypeDateFile
AOZ5518QI Datasheet
Datasheets2021-04-02PDF
AOZ5518QI Marking
Markings2021-04-05PDF
AOZ5518QI Reliability Report
Reliability Reports2021-04-05PDF
QFN5x5_31L_EP3_S
Package2020-03-09PDF
QFN5x5_31L_EP3_S Tape & Reel
Tape & Reel2024-03-15PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
QFN5x5_31L_EP3_S 5.0x5.0x0.9PDFTape and Reel