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AO4806
Low Voltage MOSFETs (12V - 30V)
Status: Full Production
20V Dual N-Channel MOSFET
Parametrics
Status | Full Production |
Package | SO8 |
Configuration | Dual |
Polarity | N |
VDS (V) | 20 |
RDS(ON) max (mΩ) at VGS=10V | 14 |
RDS(ON) max (mΩ) at VGS=4.5V | 16 |
RDS(ON) max (mΩ) at VGS=2.5V | 22 |
RDS(ON) max (mΩ) at VGS=1.8V | 30 |
VGS (±V) | 12 |
ID @ 25°C (A) | 9.40 |
PD @ 25°C (W) | 2 |
Qg (4.5V)(nC) | 17.90 |
VGS(th) min (V) | 0.50 |
VGS(th) typ (V) | 0.75 |
VGS(th) max (V) | 1 |
Ciss (pF) | 1810 |
Coss (pF) | 232 |
Crss (pF) | 200 |
Qgd (nC) | 4.70 |
tD(on) (ns) | 3.30 |
tD(off) (ns) | 44 |
Trr (ns) | 22 |
Qrr (nC) | 8.60 |
ESD Diode | Yes |
Qualification | Industrial |
Tj max (°C) | 150 |
Parametrics
Status | Full Production |
Package | SO8 |
Configuration | Dual |
Polarity | N |
VDS (V) | 20 |
RDS(ON) max (mΩ) at VGS=10V | 14 |
RDS(ON) max (mΩ) at VGS=4.5V | 16 |
RDS(ON) max (mΩ) at VGS=2.5V | 22 |
RDS(ON) max (mΩ) at VGS=1.8V | 30 |
VGS (±V) | 12 |
ID @ 25°C (A) | 9.40 |
PD @ 25°C (W) | 2 |
Qg (4.5V)(nC) | 17.90 |
VGS(th) min (V) | 0.50 |
VGS(th) typ (V) | 0.75 |
VGS(th) max (V) | 1 |
Ciss (pF) | 1810 |
Coss (pF) | 232 |
Crss (pF) | 200 |
Qgd (nC) | 4.70 |
tD(on) (ns) | 3.30 |
tD(off) (ns) | 44 |
Trr (ns) | 22 |
Qrr (nC) | 8.60 |
ESD Diode | Yes |
Qualification | Industrial |
Tj max (°C) | 150 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4806 Datasheet | Datasheets | 2024-04-17 | |
| AO4806 Marking | Markings | 2019-02-12 | |
| AO4806 Reliability Report | Reliability Reports | 2019-02-12 | |
| SO8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| SO8 | 4.9x3.9x1.65 | Tape and Reel |