The AOZ5516RQI is a high efficiency synchronous buck power stage module consisting of two asymmetrical MOSFETs and an integrated driver. The MOSFETs are individually optimized for operation in the synchronous buck configuration. The High-Side MOSFET is optimized to achieve low capacitance and gate charge for fast switching with low duty cycle operation. The Low-Side MOSFET has ultra low ON resistance to minimize conduction loss. The compact 5mm x 5mm QFN package is optimally chosen and designed to minimize parasitic inductance for minimal EMI signature.

Status | New |
Power Stage Type | DrMOS |
Package | QFN5x5A-31L |
Min Vin (V) | 4.75 |
Max Vin (V) | 25 |
Abs Max Vin (V) | 30 |
Max DC I (A) | 55 |
Max Peak I (A) | 120 |
PWM Input (V) | 3 and 5 |
Tri-State Range (V) | 1.4 - 2.1 |
Max Frequency (MHz) | 2 |
Shutdown Control | FCCM = TS, PWM = TS |
Enable Diode Emulation Mode | No |
Thermal Flag | No |
OCP (A) | No |
NCP (A) | No |
HSD | No |
Pre-OVP | No |
Status | New |
Power Stage Type | DrMOS |
Package | QFN5x5A-31L |
Min Vin (V) | 4.75 |
Max Vin (V) | 25 |
Abs Max Vin (V) | 30 |
Max DC I (A) | 55 |
Max Peak I (A) | 120 |
PWM Input (V) | 3 and 5 |
Tri-State Range (V) | 1.4 - 2.1 |
Max Frequency (MHz) | 2 |
Shutdown Control | FCCM = TS, PWM = TS |
Enable Diode Emulation Mode | No |
Thermal Flag | No |
OCP (A) | No |
NCP (A) | No |
HSD | No |
Pre-OVP | No |
| Title | Type | Date | File |
|---|---|---|---|
| AOZ5516RQI Datasheet | Datasheets | 2026-01-28 | |
| AOZ5516RQI Marking | Markings | 2026-01-20 | |
| AOZ5516RQI Reliability Report | Reliability Reports | 2026-01-10 | |
| QFN5x5A_31L_EP3_S | Package | 2025-07-25 | |
| QFN5x5A_31L_EP3_S Tape & Reel | Tape & Reel | 2022-10-06 |
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| QFN5x5A_31L_EP3_S | 5.0x5.0x0.75 | Tape and Reel |