AONV080V65GA1
氮化镓（GaN）
Status: Engineering Evaluation
650V GaN Enhancement-mode Power Transistor
Parametrics
Status | Engineering Evaluation |
Technology | E-mode GaN |
Qualification | Industrial |
VDS (V) | 650 |
RDS(ON) max (mΩ) at VGS = 5V | 80 |
ID @ 25°C (A) | 29 |
Qg (nC) | 6.20 |
In Stock | Samples Available |
Parametrics
Status | Engineering Evaluation |
Technology | E-mode GaN |
Qualification | Industrial |
VDS (V) | 650 |
RDS(ON) max (mΩ) at VGS = 5V | 80 |
ID @ 25°C (A) | 29 |
Qg (nC) | 6.20 |
In Stock | Samples Available |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONV080V65GA1 Product Brief | Product Brief | 2025-10-03 |