650V GaN Enhancement-mode Power Transistor
Status | Engineering Evaluation |
Technology | E-mode GaN |
Qualification | Industrial |
VDS (V) | 650 |
RDS(ON) max (mΩ) at VGS = 5V | 34 |
ID @ 25°C (A) | 60 |
Qg (nC) | 16 |
Status | Engineering Evaluation |
Technology | E-mode GaN |
Qualification | Industrial |
VDS (V) | 650 |
RDS(ON) max (mΩ) at VGS = 5V | 34 |
ID @ 25°C (A) | 60 |
Qg (nC) | 16 |