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AOGT037V60DE2
High Voltage MOSFETs (500V - 1000V)
Status: New
600V, αMOS E2™ N-Channel Power Transistor
Parametrics
Status | New |
Package | GTPAK |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 20 |
ID @ 25°C (A) | 82 |
PD @ 25°C (W) | 625 |
RDS(ON) max (mΩ) at VGS=10V | 37 |
Qg (10V)(nC) | 146 |
VGS(th) min (V) | 2.80 |
VGS(th) typ (V) | 3.50 |
VGS(th) max (V) | 4.20 |
Ciss (pF) | 4250 |
Coss (pF) | 135 |
Crss (pF) | 3.50 |
Qgd (nC) | 80 |
tD(on) (ns) | 52 |
tD(off) (ns) | 200 |
Trr (ns) | 175 |
Qrr (nC) | 1200 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Parametrics
Status | New |
Package | GTPAK |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 20 |
ID @ 25°C (A) | 82 |
PD @ 25°C (W) | 625 |
RDS(ON) max (mΩ) at VGS=10V | 37 |
Qg (10V)(nC) | 146 |
VGS(th) min (V) | 2.80 |
VGS(th) typ (V) | 3.50 |
VGS(th) max (V) | 4.20 |
Ciss (pF) | 4250 |
Coss (pF) | 135 |
Crss (pF) | 3.50 |
Qgd (nC) | 80 |
tD(on) (ns) | 52 |
tD(off) (ns) | 200 |
Trr (ns) | 175 |
Qrr (nC) | 1200 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOGT037V60DE2 Datasheet | Datasheets | 2026-08-18 | |
| AOGT037V60DE2 Marking | Markings | 2026-08-18 | |
| AOGT037V60DE2 Reliability Report | Reliability Reports | 2026-08-18 | |
| GTPAK | Package | 2025-03-07 | |
| GTPAK Tape & Reel | Tape & Reel | 2024-08-23 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| GTPAK | 10.0x15.0x2.3 | Tape and Reel |