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AOFE035V10GA1
Gallium Nitride (GaN) Transistors
Status: Engineering Evaluation
100V GaN Enhancement-mode Power Transistor
Parametrics
Status | Engineering Evaluation |
Technology | E-mode GaN |
Qualification | Industrial |
VDS (V) | 100 |
RDS(ON) max (mΩ) at VGS = 5V | 3.50 |
ID @ 25°C (A) | 201 |
Qg (nC) | 7.60 |
Parametrics
Status | Engineering Evaluation |
Technology | E-mode GaN |
Qualification | Industrial |
VDS (V) | 100 |
RDS(ON) max (mΩ) at VGS = 5V | 3.50 |
ID @ 25°C (A) | 201 |
Qg (nC) | 7.60 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOFE035V10GA1 Product Brief | Product Brief | 2025-07-02 |