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AOFG018V10GA1
Gallium Nitride (GaN) Transistors
Status: Engineering Evaluation
100V GaN Enhancement-mode Power Transistor
Parametrics
Status | Engineering Evaluation |
Technology | E-mode GaN |
Qualification | Industrial |
VDS (V) | 100 |
RDS(ON) max (mΩ) at VGS = 5V | 1.80 |
ID @ 25°C (A) | 495 |
Qg (nC) | 19 |
Parametrics
Status | Engineering Evaluation |
Technology | E-mode GaN |
Qualification | Industrial |
VDS (V) | 100 |
RDS(ON) max (mΩ) at VGS = 5V | 1.80 |
ID @ 25°C (A) | 495 |
Qg (nC) | 19 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOFG018V10GA1 Product Brief | Product Brief | 2025-07-02 |