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AOS 推出用于 USB3.2和 Thunderbolt 3.0 线路保护的超低电容 TVS 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AOD5T40P Obsolete - TO252 Single N 400 30 3.9 52 1,450 - - - 5
AOL1242 Obsolete - UltraSO-8 Single N 40 20 69 68 5.2 7.9 - - 8
AOL1404 Obsolete - UltraSO-8 Single N 20 12 45 60 - 4 5.6 - 36
AON5802B Obsolete - DFN2x5-6L Common Drain N 30 12 7.2 1.6 - 19 30 - 7.5
AON6232 Obsolete - DFN5x6-8L EP1 Single N 40 20 85 83 2.5 3.6 - - 18.2
AON6404A Obsolete - DFN5x6-8L EP1 Single N 30 20 85 83 2.3 3 - - 33
AON6413 Obsolete - DFN5x6-8L EP1 Single P -30 25 -32 48 8.5 17 - - 18.5
AON6508 Obsolete - DFN5x6-8L EP1 Single N 30 20 32 41 3.2 5 - - 17
AON6908A Obsolete - DFN5x6B-8L EP2 Asymmetric N 30 12 80 78 3.6 4.5 - - 31
Obsolete - DFN5x6B-8L EP2 Asymmetric N 30 20 46 31 8.9 12.5 - - 5.7
AON6970 Obsolete - DFN5x6D-8L EP2_S Asymmetric N 30 20 85 78 1.5 2.3 - - 27
Obsolete - DFN5x6D-8L EP2_S Asymmetric N 30 20 58 31 5.4 8.5 - - 8
AON6978 Obsolete - DFN5x6B-8L EP2 Asymmetric N 30 20 28 31 5.7 9.4 - - 6.8
Obsolete - DFN5x6B-8L EP2 Asymmetric N 30 12 36 33 3.8 4.9 - - 20.6
AON7242 Obsolete - DFN3.3x3.3-8L Single N 40 20 50 83 3.9 5.8 - - 11.9
AON7422E Obsolete - DFN3x3-8L Single N 30 20 40 36 4.3 6 - - 19