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AOS推出面向USB Type-C应用的全新XSPairFET™升降压MOSFET 详情 »

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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AOB42S60 - - TO263 Single N 600 30 37 417 109 - - - 40
AOB7S65 - - TO263 Single N 650 30 7 104 650 - - - 9.2
AO3422 - - SOT-23-3L Single N 55 12 2.1 1.25 - 160 200 - 2.6
AO3442 - - SOT-23-3L Single N 100 20 1 1.4 630 720 - - 1.5
AO4294 - - SOIC-8 Single N 100 20 11.5 3.1 12 15.5 - - 15
AO4402 - - SOIC-8 Single N 20 12 20 3.1 - 5.5 7 - 36
AO4407A - - SOIC-8 Single P -30 25 -12 3.1 13 17 - - 30
AO4430 - - SOIC-8 Single N 30 20 18 3 5.5 7.5 - - 48
AO4476A - - SOIC-8 Single N 30 20 15 3.1 7.7 10.8 - - 9.5
AO4480 - - SOIC-8 Single N 40 20 14 3.1 11.5 15.5 - - 10.5
AO4486 - - SOIC-8 Single N 100 20 4.2 3.1 79 90 - - 8.1
AO4611 - - SOIC-8 Complementary N 60 20 6.3 2 25 30 - - 24.2
- - SOIC-8 Complementary P -60 20 -4.9 2 42 52 - - 22.8
AO4840 - - SOIC-8 Dual N 40 20 6 2 30 38 - - 4.3
AO4882 - - SOIC-8 Dual N 40 20 8 2 19 27 - - 3
AOB12N65L - - TO263 Single N 650 30 12 278 720 - - - 39.8
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